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HVC135
Silicon Epitaxial Trench Pin Diode for Antenna Switching
ADE-208-818A (Z) Rev 1 Feb. 2000 Features
* * * * Adopting the trench structure improves low capacitance.(C=0.6pF max) Low forward resistance. (rf=2.0 max) Low operation current. Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency.
Ordering Information
Type No. HVC135 Laser Mark P5 Package Code UFP
Outline
Cathode mark Mark 1
P5
2 1. Cathode 2. Anode
HVC135
Absolute Maximum Ratings (Ta = 25C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability
*1
Symbol IR VF C rf --
Min -- -- -- -- 100
Typ -- -- -- -- --
Max 0.1 0.9 0.6 2.0 --
Unit A V pF V
Test Condition VR = 60V I F = 2 mA VR = 1V, f = 1 MHz I F = 2mA, f = 100 MHz C = 200pF , Both forward and reverse direction 1 pulse.
Notes 1. Failure criterion ; IR > 100nA at VR =60 V
2
HVC135
Main Characteristic
10
-2 -8
10
10
-4
10
-9
Forward current I F (A)
Reverse current IR (A)
10
-6
10 -10
Ta= 75C
-11
10
10 -8
Ta= 25C Ta= 50C Ta= 75C
Ta= 50C
10 -12
Ta= 25C
10
-10
10-13
10
-12
0
0.2
0.4
0.6
0.8
1.0
10
-14
0
20
40
60
80
100
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage
f=1MHz 10
1
f=100MHz
Forward resistance r f ( )
10
Capacitance C (pF)
1.0
10
0
0.1 0.1 1.0 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 10
10
-1
10
-5
10
-4
10
-3
10 (A)
-2
Forward current I
F
Fig.4 Forward resistance Vs. Forward current
3
HVC135
Main Characteristic
10 10 10
6 5 4 3
Forward resistance (parallel) r P ()
f=100MHz
10
102 10 1 10 10
0
-1
0
0.2
0.4
0.6
0.8
Forward voltage VF (V) Fig.5 Forward resistance (parallel) Vs. Forward voltage
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HVC135
Package Dimensions
Unit: mm
1.6 0.10
0.13 0.05
0.6 0.10
0.3 0.05 0.8 0.10
1.2 0.10
Hitachi Code JEDEC EIAJ Weight (reference value)
UFP -- Conforms 0.0016 g
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HVC135
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/index.htm For further information write to:
Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223
Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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